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| BSR30 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP medium power transistors | |||
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SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 â JUNE 1996
7
COMPLEMENTARY TYPE â BSR40
PARTMARKING DETAIL â BR1
BSR30
C
ABSOLUTE MAXIMUM RATINGS.
E
C
B
SOT89
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-70
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-70
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-60
V
IC=-10mA
Emitter-Base Breakdown Voltage V(BR)EBO -5
Collector Cut-Off Current
ICBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Collector Capacitance
Emitter Capacitance
Transition Frequency
VCE(sat)
VBE(sat)
hFE
10
40
30
Cc
Ce
fT
100
-100
-50
-0.25
-0.5
-1.0
-1.2
120
20
120
V
nA
µA
V
V
V
V
pF
pF
MHz
IE=-10µA
VCB=-60V
VCB=-60V, Tamb=125°C
IC =-150mA, IB=-15mA
IC =-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC =-500mA, IB=-50mA
IC =-100µA, VCE =-5V
IC =-100mA, VCE =-5V
IC =-500mA, VCE =-5V
VCB =-10V, f =1MHz
VEB =-0.5V, f =1MHz
IC=-50mA, VCE=-10V
f =35MHz
Turn-On Time
Ton
500 ns
Turn-Off Time
Toff
650 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
For typical characteristics graphs see FMMT551 datasheet.
VCC =-20V, IC =-100mA
IB1 =-IB2 =-5mA
3 - 65
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