BSP75N Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Smart Lowside Power Switch

BSP75N
60V self-protected low-side Intellifet^TM MOSFET switch
Summary
Continuous drain source voltage
On-state resistance
Maximum nominal load current^(a)
Minimum nominal load current^(c)
Clamping energy
V_DS=60V
500m⍀
1.1A (V_IN = 5V)
0.7A (V_IN = 5V)
550mJ
SOT223
Description
Self-protected low side MOSFET. Monolithic over temperature, over
S
current, over voltage (active clamp) and ESD protected logic level
functionality. Intended as a general purpose switch.
S
D
IN
Features
• Short circuit protection with auto restart
• Over-voltage protection (active clamp)
• Thermal shutdown with auto restart
Note:
The tab is connected to the source pin and must
be electrically isolated from the drain pin.
Connection of significant copper to the drain pin
is recommended for best thermal performance.
• Over-current protection
• Input protection (ESD)
• High continuous current rating
• Load dump protection (actively protects load)
• Logic level input
Ordering information
Device
BSP75NTA
Reel size
(inches)
7
Tape width
(mm)
12mm embossed
Quantity per reel
1000
Device marking
BSP75N
Issue 4 - September 2006
1
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