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| BSP43 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTORS | |||
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SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 â MARCH 2001
âª
COMPLEMENTARY TYPE â BSP33
BSP43
C
PARTMARKING DETAIL â BSP43
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
90
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
Base Current
IB
100
mA
Power Dissipation at Tamb=25°C
PTOT
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 90
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 80
V
IC=10mA *
Emitter-Base Breakdown
Voltage
V(BR)EBO 5
V
IE=10µA
Collector Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer Ratio
Output Capacitance
Input Capacitance
Transition Frequency
ICBO
VCE(sat)
VBE(sat)
hFE
Cobo
Cibo
fT
30
100
50
100
100
50
0.25
0.5
1.0
1.2
300
12
90
nA
µA
V
V
V
V
pF
pF
MHz
VCB=60V
VCB=60V, Tamb =125°C
IC =150mA, IB =15mA
IC =500mA, IB =50mA
IC =150mA, IB =15mA
IC =500mA, IB =50mA
IC =100µA, VCE =5V
IC =100mA, VCE =5V
IC =500mA, VCE =5V
VCB =10V, f=1MHz
VEB =0.5V, f=1MHz
IC=50mA, VCE=10V
f =35MHz
Turn-On Time
Turn-Off Time
Ton
250 ns
VCC =20V, IC =100mA
Toff
1000 ns
IB1 =IB2 =5mA
*Measured under pulsed conditions.
For typical characteristics graphs see FMMT493 datasheet.
TBA
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