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| BSP41 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN medium power transistors | |||
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SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 Â NOVEMBER 1995 7
BSP41
BSP43
COMPLEMENTARY TYPES Â BSP43 - BSP33
C
BSP41 - BSP31
PARTMARKING DETAIL Â DEVICE TYPE IN FULL
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BSP41
BSP43
UNIT
Collector-Base Voltage
VCBO
70
90
V
Collector-Emitter Voltage
VCEO
60
80
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
Base Current
IB
100
mA
Power Dissipation at Tamb=25°C
PTOT
2
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
BSP43
Breakdown Voltage BSP41
V(BR)CBO 90
70
V
IC=100µA
Collector-Emitter BSP43
Breakdown Voltage BSP41
V(BR)CEO 80
60
V
IC=10mA *
Emitter-Base Breakdown Voltage V(BR)EBO 5
Collector Cut-Off Current
ICBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer Ratio
Collector Capacitance
Emitter Capacitance
Transition Frequency
VCE(sat)
VBE(sat)
hFE
30
100
50
Cc
Ce
fT
100
V
IE=10µA
100 nA
50
µA
VCB=60V
VCB=60V, Tamb =125°C
0.25 V
0.5
V
IC =150mA, IB =15mA
IC =500mA, IB =50mA
1.0
V
1.2
V
IC =150mA, IB =15mA
IC =500mA, IB =50mA
IC =100µA, VCE =5V
300
IC =100mA, VCE =5V
IC =500mA, VCE =5V
12
pF
VCB =10V, f=1MHz
90
pF
VEB =0.5V, f=1MHz
MHz
IC=50mA, VCE=10V
f =35MHz
Turn-On Time
Ton
250 ns
Turn-Off Time
Toff
1000 ns
*Measured under pulsed conditions.
For typical characteristics graphs see
PFuMlsMeTw4i9d3thd=a3t0a0shµes.eDt.uty
cycle
â¤2%
VCC=20V, IC =100mA
IB1 =IB2 =5mA
3 - 64
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