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| BSP40 Datasheet, PDF (1/1 Pages) STMicroelectronics – MEDIUM POWER AMPLIFIER | |||
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SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 Â FEBRUARY 1996 7
COMPLEMENTARY TYPES Â BSP40 Â BSP30
BSP42 Â BSP32
BSP40
BSP42
C
PARTMARKING DETAIL Â Device type in full
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BSP40
BSP42
UNIT
Collector-Base Voltage
VCBO
70
90
V
Collector-Emitter Voltage
VCEO
60
80
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
Base Current
IB
100
mA
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
BSP40 V(BR)CBO 70
Breakdown Voltage BSP42
90
Collector-Emitter BSP40 V(BR)CEO 60
Breakdown Voltage BSP42
80
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V
IC=100µA
V
IC=100µA
V
IC=10mA
V
IC=10mA
V
IE=10µA
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer Ratio
Collector Capacitance
Emitter Capacitence
Transition Frequency
ICBO
VCE(sat)
VBE(sat)
hFE
10
40
30
Cc
Ce
fT
100
100
nA
50
µA
VCB=60V
VCB=60V, Tamb=125°C
0.25 V
0.5
V
IC =150mA, IB=15mA
IC =500mA, IB=50mA
1.0
V
1.2
V
IC =150mA, IB=15mA
IC =500mA, IB=50mA
IC =100µA, VCE=5V
120
IC =100mA, VCE=5V
IC =500mA, VCE=5V
12
pF
VCB =10V, f =1MHz
90
pF
VEB =0.5V, f=1MHz
MHz
IC=50mA, VCE=10V
f =35MHz
Turn-On Time
Ton
Turn-Off Time
Toff
250
ns
1000 ns
VCC =20V, IC =100mA
IB1 =-IB2 =-5mA
*Measured under pulsed conditions.
For typical characteristics graphs see
PFuMlsMeTw4i9d3thd=a3t0a0shµes.eDt.uty
cycle
â¤2%
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