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| BSP20 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 Â FEBRUARY 1996 7
FEATURES
* High VCEO
* Low saturation voltage
COMPLEMENTARY TYPE Â BSP15
PARTMARKING DETAIL Â BSP20
BSP20
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
300
V
250
V
5
V
1
A
0.5
A
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 300
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 250
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V
IE=100µA
Collector Cut-Off
ICBO
Current
20
nA
VCB=300V
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
50
nA
VEB=5V
0.5 V
IC=50mA, IB=4mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.3 V
IC=50mA, IB=4mA*
Base-Emitter Turn-On VBE(on)
Voltage
2.0 V
IC=100mA, VCE=10V*
Static Forward Current hFE
40
Transfer Ratio
30
Transition Frequency fT
40
IC=20mA, VCE=10V*
200
IC=30mA, VCE=10V*
200 MHz IC=10mA, VCE=20V
f = 20MHz
Output Capacitance
Cobo
6
pF
VCB=20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
For typical characteristics graphs see FMMTA42 datasheet.
3 - 61
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