BSP19 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN high-voltage transistors

SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – FEBRUARY 1996
FEATURES
* High V_CEO – 350V
* Low saturation voltage
COMPLEMENTARY TYPE – BSP16
PARTMARKING DETAIL – BSP19
BSP19
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature
Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
T_j:T_stg
VALUE
400
350
5
1
0.5
2
-55 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V_(BR)CBO 400
V
I_C=100µA
Collector-Emitter
Breakdown Voltage
V_(BR)CEO 350
V
I_C=10mA*
Emitter-Base
Breakdown Voltage
V_(BR)EBO 5
V
I_E=100µA
Collector Cut-Off
I_CBO
Current
20
nA
V_CB=300V
Emitter Cut-Off Current I_EBO
Collector-Emitter
Saturation Voltage
V_CE(sat)
0.1
µA
V_EB=3V
0.5 V
I_C=50mA, I_B=4mA*
Base-Emitter
Saturation Voltage
V_BE(sat)
1.3 V
I_C=50mA, I_B=4mA*
Static Forward Current h_FE
40
Transfer Ratio
50
Transition Frequency f_T
70
MHz
I_C=20mA, V_CE=5V*
I_C=100mA, V_CE=5V*
I_C=10mA, V_CE=10V
f = 20MHz
Output Capacitance
C_obo
10
pF
V_CB=20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FZT658 datasheet.
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