BSP16 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP high-voltage transistor

SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – AUGUST 1995
FEATURES
* High V_CEO
* Low saturation voltage
BSP16
C
COMPLEMENTARY TYPE: – BSP19
PARTMARKING DETAIL: – BSP16
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature
Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
T_j:T_stg
VALUE
-350
-300
-6
-1
-0.5
2
-55 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V_(BR)CBO -350
V
I_C=-100µA
Collector-Emitter
Breakdown Voltage
V_(BR)CEO -300
V
I_C=-10mA
Emitter-Base Breakdown V_(BR)EBO -5
Voltage
V
I_E=-100µA
Collector Cut-Off
I_CBO
Current
-1
µA
V_CB=-280V
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
I_EBO
V_CE(sat)
Static Forward Current h_FE
30
Transfer Ratio
-20
µA
- 2.0 V
-0.5
V
120
V_EB=-6V
I_C=-50mA, I_B=-5mA*
I_C=-30mA, I_B=-3mA*
I_C=-50mA, V_CE=-10V*
Transition Frequency
f_T
15
MHz
I_C=-10mA, V_CE=-10V*
f = 30MHz
Output Capacitance
C_obo
15
pF
V_CB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMTA92 datasheet.
3 - 59