BS107P Datasheet, PDF (1/1 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93
FEATURES
* 200 Volt V_DS
* R_DS(on)=23Ω
BS107P
REFER TO BS107PT FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
Continuous Drain Current at T_amb=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T_amb =25°C
Operating and Storage Temperature Range
V_DS
I_D
I_DM
V_GS
P_tot
T_j:T_stg
D
G
S
E-Line
TO92 Compatible
VALUE
200
0.12
2
±20
500
-55 to +150
UNIT
V
A
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV_DSS
200
230
V
I_D=100µA, V_GS=0V
Gate Body Leakage
I_GSS
10
nA
Drain Cut-Off Current
I_DSS
30
nA
Drain Cut-Off Current
I_DSX
1
µA
Static Drain-Source
on-State Resistance
R_DS(on)
15
23
Ω
30
Ω
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
VGS=15V, V_DS=0V
V_GS=0V, V_DS=130V
V_GS=0.2V, V_DS=70V
V_GS=2.6V, I_D=25mA*
V_GS=5V, I_D=100mA*
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