BFS20 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN medium frequency transistor

SOT23 NPN SILICON PLANAR
VHF TRANSISTOR
ISSUE 3 – JANUARY 1996 7
PARTMARKING DETAIL — G1
BFS20
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
T_j:T_stg
SOT23
VALUE
30
20
4
25
25
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
I_CBO
Current
Base-Emitter Voltage V_BE
Static Forward Current h_FE
Transfer Ratio
100 nA
10
µA
V_CB=20V, I_E=0
V_CB=20V, I_E=0,
T_amb=100°C
740
900
mV
I_C=7mA, V_CE=10V*
40
85
I_C=7mA, V_CE=10V*
Transition Frequency f_T
275 450
MHz I_C=5mA, V_CE=10V
f=100MHz
Feedback Capacitance C_re
0.35 0.40 pF
I_C=1mA, V_CE=10V
f=1MHz
Collector Capacitance C_TC
0.8
pF
I_E=I_e=0, V_CB=10V
f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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