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| BFS17HTA Datasheet, PDF (1/2 Pages) Zetex Semiconductors – SOT23 NPN SILICON PLANAR RF TRANSISTORS | |||
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BFS17H and BFS17L are Obsolete
Please Use BFS17N
SOT23 NPN SILICON PLANAR
RF TRANSISTORS
BFS17L
BFS17H
ISSUE 4 â MARCH 2001
PARTMARKING DETAILS â BFS17L - E1L
BFS17H - E1H
C
E
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
Collector Cut-Off
ICBO
10
Current
10
Static Forward Current hFE
Transfer Ratio
BFS17L
BFS17H
Transition
fT
Frequency
25
100
70
200
20
125
1.0
1.3
Feedback Capacitance
Output Capacitance
Input Capacitance
Noise Figure
-Cre
Cobo
Cibo
N
0.85
1.5
2.0
4.5
Intermodulation
dim
-45
Distortion
VALUE
25
15
2.5
50
25
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
UNIT CONDITIONS.
nA VCB=10V, IE=0
µA
VCB=10V, IE=0,
Tamb = 100°C
GHz
GHz
pF
pF
pF
dB
dB
IC=2.0mA, VCE=1.0V
IC=2.0mA, VCE=1.0V
IC=25mA, VCE=1.0V
IC=2.0mA, VCE=5.0V
f=500MHz
IC=25mA, VCE=5.0V
f=500MHz
IC=2.0mA, VCE=5V, f=1MHz
VCB=10V, f=1MHz
VEB=0.5V, f=1MHz
IC=2.0mA, VCE=5.0V
RS=50â¦, f=500MHz
IC=10mA, VCE=6.0V
RL=37.5â¦,Tamb=25°C
Vo=100mV at fp=183MHz
Vo=100mV at fq=200MHz
measured at f(2q-p)=217MHz
Spice parameter data is available upon request for this device
TBA
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