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| BFN19 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - JANUARY 1996 7
BFN19
C
COMPLEMENTARY TYPE - BFN18
PARTMARKING DETAIL - DH
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
E
C
B
VALUE
-300
-300
-5
-500
-200
-100
-1
-65 to +150
UNIT
V
V
V
mA
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-300
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-300
V
IC=-1mA*
Emitter-Base Breakdown V(BR)EBO
-5
Voltage
V
IE=-100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
VCE(sat)
-100 nA
-20 µA
-100 nA
-0.5 V
VCB=-250V
VCB=-250V, Tamb=150°C
VEB=-3V
IC=-20mA, IB=-2mA
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9 V
IC=-20mA, IB=-2mA
Static Forward Current hFE
25
Transfer Ratio
40
30
Transition
Frequency
fT
Typ.
100
MHz
IC=-1mA, VCE=-10V*
IC=-10mA, VCE=-10V*
IC=-30mA, VCE=-10V*
IC=-20mA, VCE=-10V
f=20MHz
Output Capacitance
Cobo
Typ.
2.5
pF
VCB=-30V,f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
For typical characteristics graphs see FMMTA92 datasheet.
3 - 45
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