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| BFN18 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - JANUARY 1996 7
COMPLEMENTARY TYPE - BFN19
PARTMARKING DETAIL - DE
BFN18
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
E
C
B
VALUE
300
300
5
500
200
100
1
-65 to +150
UNIT
V
V
V
mA
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
300
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
300
V
IC=1mA*
Emitter-Base Breakdown V(BR)EBO
5
Voltage
V
IE=100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
VCE(sat)
100 nA
20 µA
100 nA
0.5 V
VCB=250V
VCB=250V, Tamb=150°C
VEB=3V
IC=20mA, IB=2mA
Base-Emitter
Saturation Voltage
VBE(sat)
0.9 V
IC=20mA, IB=2mA
Static Forward Current hFE
25
Transfer Ratio
40
30
Transition
Frequency
fT
Typ.
70
MHz
IC=1mA, VCE=10V*
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
IC=20mA, VCE=10V
f=20MHz
Output Capacitance
Cobo
Typ.
1.5
pF
VCB=30V,f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
For typical characteristics graphs see FMMTA42 datasheet.
3 - 44
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