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| BFN17 Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) | |||
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SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - OCTOBER 1995 7
BFN17
C
COMPLEMENTARY TYPE - BFN16
PARTMARKING DETAILS - DG
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-250
V
Collector-Emitter Voltage
VCEO
-250
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-500
mA
Continuous Collector Current
IC
-200
mA
Base Current
IB
-100
mA
Power Dissipation at Tamb=25°C
Ptot
-1
W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -250
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -250
V
IC=-1mA
Emitter-Base Breakdown V(BR)EBO -5
Voltage
V
IE=-100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
VCE(sat)
-100 nA
-20
µA
-100 nA
-0.4
V
VCB=-250V
VCB=-250V, Tamb=150 °C
VEB=-3V
IC=-20mA, IB=-2mA
Base-Emitter Saturation VBE(sat)
Voltage
-0.9
V
IC=-20mA, IB=-2mA
Static Forward Current hFE
Transfer Ratio
Transition Frequency
fT
25
40
40
Typ.100
MHz
IC=-1mA, VCE=-10V*
IC=-10mA, VCE=-10V*
IC=-30mA, VCE=-10V*
IC=-20mA, VCE=-10V*
f=20MHz
Output Capacitance
Cobo
Typ. 2.5
pF
VCB=-30V,f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
For typical characteristics graphs see FMMTA92 datasheet
3 - 43
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