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| BFN16 Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) | |||
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SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - OCTOBER 1995 7
BFN16
C
COMPLEMENTARY TYPE - BFN17
PARTMARKING DETAILS - DD
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
250
V
Collector-Emitter Voltage
VCEO
250
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
500
mA
Continuous Collector Current
IC
200
mA
Base Current
IB
100
mA
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 250
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 250
V
IC=1mA
Emitter-Base Breakdown V(BR)EBO 5
Voltage
V
IE=100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
VCE(sat)
100
nA
20
µA
100
nA
0.4
V
VCB=250V
VCB=250V, Tamb=150 °C
VEB=3V
IC=20mA, IB=2mA
Base-Emitter Saturation VBE(sat)
Voltage
0.9
V
IC=20mA, IB=2mA
Static Forward Current hFE
Transfer Ratio
Transition Frequency
fT
25
40
40
Typ.70
MHz
IC=1mA,VCE=10V*
IC=10mA, VCE=10V
IC=30mA, VCE=10V
IC=20mA, VCE=10V*
f=20MHz
Output Capacitance
Cobo
Typ.1.5
pF
VCB=30V,f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
For typical characteristics graphs see FMMTA42 datasheet
3 - 42
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