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| BF721 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
BF721
ISSUE 4 â MARCH 2001
âª
FEATURES
* High breakdown and low saturation voltages
APPLICATIONS
* Suitable for video output stages in TV sets
* Switching power supplies
COMPLEMENTARY TYPE:- BF720
PARTMARKING DETAILS:- BF721
ABSOLUTE MAXIMUM RATINGS.
C
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
-300
V
-300
V
-5
V
-100
mA
-50
mA
-2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base BF721
Breakdown
Voltage
V(BR)CBO
-300
V
IC=-10µA, IE=0
Collector-Emitter BF721
Breakdown
Voltage
V(BR)CEO
-300
V
IC=-1mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-100µA, IC=0
Collector Cut-Off Current ICBO
Collector Cut-Off
ICER
Current
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-10
nA
-50
nA
-10
µA
-10
µA
-0.6 V
VCB=-200V, IE=0 â
VCE=-200V, RBE=2.7Kâ¦
VCE=-200V, RBE=2.7K⦠â
VEB=-5V, IC=0
IC=-30mA, IB=-5mA*
Base Emitter
Saturation Voltage
VBE(sat)
-0.9 V
IC=-20mA, IB=-2mA*
Static Forward Current hFE
-50
Transfer Ratio
IC=-25mA, VCE=-20V*
Transition Frequency fT
100
MHz IC=-10mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
0.8
â Tamb=150°C
*Measured under pulsed conditions.
For typical characteristics graphs see FMMTA92 datasheet.
pF
VCB=-30V, f=1MHz
TBA
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