 English |
|
|
|
|
|
|
|
| BF720 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN high-voltage transistors | |||
| |||
|
SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
BF720
ISSUE 4 â MARCH 2001
âª
FEATURES
* High breakdown and low saturation voltages
APPLICATIONS
* Suitable for video output stages in TV sets
* Switching power supplies
COMPLEMENTARY TYPE:- BF721
PARTMARKING DETAILS:- BF720
ABSOLUTE MAXIMUM RATINGS.
C
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
300
V
300
V
5
V
100
mA
50
mA
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 300
V
IC=10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 300
V
IC=1mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V
IE=100µA, IC=0
Collector Cut-Off Current ICBO
Collector Cut-Off
ICER
Current
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
10
nA
VCB=200V, IE=0
50
nA
VCE=200V, RBE=2.7Kâ¦
10
µA
VCE=200V, RBE=2.7k⦠â
10
µA
VEB=5V, IC=0
0.6
V
IC=30mA, IB=5mA*
Base Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=20mA, IB=2mA*
Static Forward Current hFE
50
Transfer Ratio
IC=25mA, VCE=20V*
Transition Frequency fT
100
MHz IC=10mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
0.8
â Tamb =150°C
*Measured under pulsed conditions.
For typical characteristics graphs see FMMTA42 datasheet.
pF
VCB=30V, f=1MHz
TBA
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese