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| BF621 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP high-voltage transistors | |||
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SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
BF621
ISSUE 3 â MARCH 2001
âª
FEATURES
* High breakdown and low saturation voltage
APPLICATIONS
* Suitable for video output stages in TV sets
* Switching power supplies
COMPLEMENTARY TYPE â BF620
PARTMARKING DETAIL â
DF
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT89
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-300
V
Collector-Emitter Voltage
VCEO
-300
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-100
mA
Continuous Collector Current
IC
-50
mA
Power Dissipation at Tamb=25°C
Ptot
-1
W
Operating and Storage Temperature Range
Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -300
V
IC=-10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -300
V
IC=-1mA, IB=0*
Emitter-Base Breakdown
Voltage
V(BR)EBO -5
V
IE=-100µA, IC=0
Collector Cut-Off Current
Colector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
ICBO
ICER
IEBO
VCE(sat)
-10
nA VCB=-200V, IE=0
-20
µA VCB=-200V, IE=0 â
-50
nA VCE=-200V, RBE=2.7Kâ¦
-10
µA VCE=-200V, RBE=2.7K⦠â
-10
µA VEB=-5V, IC=0
-0.6
V
IC=-30mA, IB=-5mA*
Base-Emitter Saturation Voltage VBE(sat)
Static Forward
Current Transfer Ratio
hFE
50
-0.9
V
IC=-20mA, IB=-2mA*
IC=-25mA, VCE=-20V*
Transition Frequency
fT
100 Typical MHz IC=-10mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
0.8 Typical pF
â Tamb=150°C
*Measured under pulsed conditions.
For typical characteristics graphs see FMMTA92 datasheet.
VCB=-30V, f=1MHz
TBA
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