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| BF620 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN high-voltage transistors | |||
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SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 5 â MARCH 2001
âª
FEATURES
* High breakdown and low saturation voltages
APPLICATIONS
* Suitable for video output stages in TV sets
* Switching power supplies
COMPLEMENTARY TYPE: BF621
PARTMARKING DETAIL â
DC
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
BF620
C
E
C
B
SOT89
VALUE
300
300
5
100
50
1
-65 to +150
UNIT
V
V
V
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 300
V
IC=10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 300
V
IC=1mA, IB=0*
Emitter-Base Breakdown
Voltage
V(BR)EBO 5
V
IE=100µA, IC=0
Collector Cut-Off Current
Colector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
ICER
IEBO
VCE(sat)
10
nA
VCB=200V, IE=0
20
µA
VCB=200V, IE=0 â
50
nA
VCE=200V, RBE=2.7Kâ¦
10
µA
VCE=200V, RBE=2.7K⦠â
10
µA
VEB=5V, IC=0
0.6
V
IC=30mA, IB=5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=20mA, IB=2mA*
Static Forward
Current Transfer Ratio
hFE
50
IC=25mA, VCE=20V*
Transition Frequency
fT
100 Typical MHz
IC=10mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
0.8 Typical pF
VCB=30V, f=1MHz
â Tamb=150°C
*Measured under pulsed conditions.
For typical characteristics graphs see FMMTA42 datasheet.
TBA
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