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| BCX68 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 â FEBRUARY 1995
7
FEATURES
* High gain and low saturation voltages
BCX68
C
COMPLEMENTARY TYPE â BCX69
PARTMARKING DETAIL â
BCX68 â CE
BCX68-16 â CC
BCX68-25 â CD
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT89
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
25
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown voltage
V(BR)CBO 25
V
IC =100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 20
V
IC =10mA
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V
IE =100µA
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
0.1 µA VCB =25V
10
µA
VCB =25V, Ta =150°C
10
µA
VEB =5V
0.5 V
IC =1A, IB =100mA*
Base-Emitter Turn-On
Voltage
VBE(on)
1.0 V
IC =1A, VCE =1V*
Static Forward Current hFE
50
Transfer Ratio
85
375
60
BCX68-16 100
250
BCX68-25 160 250 400
IC =5mA, VCE =10V
IC =500mA, VCE =1V
IC =1A, VCE =1V*
IC =500mA, VCE =1V*
IC =500mA, VCE =1V
Transition Frequency
fT
100
MHz IC =100mA, VCE =5V,
f=100MHz
Output Capacitance
Cobo
25
pF
VCB =10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
For typical characteristics graphs see FMMT449 datasheet.
3 - 36
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