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| BCX5616 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 â MARCH 2001
BCX5616
C
COMPLEMENTARY TYPE â BCX5316
PARTMARKING DETAIL â BL
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT89
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown voltage
V(BR)CBO 100
V
IC =100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 80
V
IC =10mA
Emitter-Base Breakdown V(BR)EBO 5
Voltage
V
IE =10µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
VCE(sat)
0.1 µA VCB =30V
20
µA VCB =30V, Tamb =150°C
20
nA VEB =4V
0.5 V
IC =500mA, IB =50mA*
Base-Emitter Turn-On
Voltage
VBE(on)
1.0 V
IC =500mA, VCE =2V*
Static Forward Current
hFE
25
Transfer Ratio
100
25
Transition Frequency
fT
150
IC =5mA, VCE =2V*
250
IC =150mA, VCE =2V*
IC =500mA, VCE =2V*
MHz IC =50mA, VCE =10V,
f=100MHz
Output Capacitance
Cobo
*Measured under pulsed conditions.
15
pF
VCB =10V, f=1MHz
TBA
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