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| BCX54 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN medium power transistors | |||
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SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 â FEBRUARY 1996 7
BCX54
BCX55
BCX56
PARTMARKING DETAILS:-
C
BCX54 â BA
BCX54-10 â BC
BCX54-16 â BD
BCX55 â BE
BCX55-10 â BG
BCX55-16 â BM
BCX56 â BH
BCX56-10 â BK
BCX56-16 â BL
COMPLEMENTARY TYPES:-
BCX54 â BCX51 BCX55 â BCX52
BCX56 â BCX53
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL BCX54 BCX55 BCX56
UNIT
Collector-Base Voltage
VCBO
45
60
100
V
Collector-Emitter Voltage
VCEO
45
60
80
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown BCX54 V(BR)CBO 45
Voltage
BCX55
60
BCX56
100
V IC =100µA
Collector-Emitter
Breakdown Voltage
BCX54 V(BR)CEO
45
BCX55
60
BCX56
80
V IC =10mA*
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
V(BR)EBO
5
ICBO
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation Voltage VCE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer
Ratio
hFE
25
40
25
â10 63
â16 100
Transition Frequency
fT
150
V
IE =10µA
0.1 µA VCB =30V
20 µA VCB =30V, Tamb =150°C
20 nA VEB =4V
0.5 V IC =500mA, IB =50mA*
1.0 V
IC =500mA, VCE =2V*
IC =5mA, VCE =2V*
250
IC =150mA, VCE =2V*
IC =500mA, VCE =2V*
160
IC =150mA, VCE =2V*
250
IC =150mA, VCE =2V*
MHz IC =50mA, VCE =10V,
f=100MHz
Output Capacitance
Cobo
15 pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
VCB =10V, f=1MHz
3 - 35
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