 English |
|
|
|
|
|
|
|
| BCX19 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN general purpose transistor | |||
| |||
|
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 â MARCH 2001
PARTMARKING DETAILS â BCX19 -
U1
BCX19R - U4
COMPLEMENTARY TYPES - BCX17
BCX19
E
C
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCES
VCEO
VEBO
ICM
IC
IB
IBM
PTOT
Tj:Tstg
50
V
45
V
5
V
1000
mA
500
mA
100
mA
200
mA
330
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off ICBO
Current
Emitter-Base Cut-Off
IEBO
Current
100 nA
200 µA
10 µA
VCB =20V
VCB =20V, Tj=150°C
VEB =5V
Base-Emitter Voltage
Collector-Emitter
Saturation Voltage
VBE
VCE(sat)
1.2 V
IC =500mA, VCE =1V*
620 mV IC =500mA, IB =50mA*
Static Forward Current hFE
Transfer Ratio
Transition Frequency
fT
100
600
IC =100mA, VCE =1V
70
IC =300mA, VCE =1V*
40
IC =500mA, VCE =1V*
200
MHz IC =10mA, VCE =5V
f =35MHz
Output Capacitance
Cobo
5.0
pF
VCB =10V, f =1MHz
*Measured under pulsed conditions.
TBA
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese