BCX17 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP general purpose transistors

SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
PARTMARKING DETAILS – BCX17
– T1
BCX17R
– T4
COMPLIMENTARY TYPES - BCX19
BCX17
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
Collector-Emitter Voltage (I_C =-10mA)
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Base Current
V_CES
V_CEO
V_EBO
I_C
I_CM
I_EM
I_B
-50
V
-45
V
-5
V
-500
mA
-1000
mA
-1000
mA
-100
mA
Peak Base Current
I_BM
-200
mA
Power Dissipation at T_amb=25°C
P_tot
330
mW
Operating and Storage Temperature Range
T_j:T_stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off
Current
Emitter-Base Cut-Off
Current
I_CBO
I_EBO
-100 nA
-200 µA
-10 µA
I_E =0, V_CB =-20V
I_E =0, V_CB =-20V, T_j=150°C
I_C =0, V_EB =-1V
Base-Emitter Voltage
Collector-Emitter
Saturation Voltage
V_BE
V_CE(sat)
-1.2 V
-620 mV
I_C =-500mA, V_CE =-1V*
I_C =-500mA, I_B =-50mA*
Static Forward Current h_FE
Transfer Ratio
Transition Frequency
f_T
100
600
I_C =-100mA, V_CE =-1V
70
I_C =-300mA, V_CE =-1V*
40
I_C =-500mA, V_CE =-1V*
100
MHz I_C =-10mA, V_CE =-5V
f =35MHz
Output Capacitance
C_obo
8.0
pF
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
V_CB =-10V, f =1MHz
TBA