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| BCW89 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose transistor | |||
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SOT23 PNP PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 Â FEBRUARY 1995
PARTMARKING DETAILS Â BCW89 Â H3
BCW89R Â H6
BCW89
E
C
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCES
-60
V
Collector-Emitter Voltage (IC =-2mA)
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-100
mA
Peak Collector Current
ICM
-200
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off ICBO
Current
Base-Emitter Voltage
Collector-Emitter
Saturation Voltage
VBE
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
Static Forward Current hFE
Transfer Ratio
Transition Frequency fT
-600
120
-80
-150
-720
-810
90
150
-100
-10
-750
-300
260
nA
µA
mV
mV
mV
mV
mV
MHz
IE =0, VCB =-20V
IE =0, VCB =-20V, Tj=100°C
IC =-2.0mA, VCE =-5.0V
IC =-10mA, IB =-0.5mA
IC =-50mA, IB =-2.5mA
IC =-10mA, IB =-0.5mA
IC =-50mA, IB =-2.5mA
IC =-10µA, VCE =-5.0V
IC =-2.0mA, VCE =-5.0V
IC =-10mA, VCE =-5.0V
f =35MHz
Collector Capacitance CTC
7
pF
IE =Ie =0, VCB =-10V
f =1MHz
Noise Figure
N
10 dB
Spice parameter data is available upon request for this device
IC =-200µA, VCE =-5.0V
RS =2.0Kâ¦, f =1KHz
B =200Hz
PAGE NO
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