BCW71 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistors

SOT23 NPN PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 – FEBRUARY 1995
PARTMARKING DETAILS –
BCW71
BCW72
BCW71R
BCW72R
– K1
– K2
– K4
– K5
BCW71
BCW72
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V_CBO
50
V
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
V_CEO
V_EBO
I_CM
I_C
P_TOT
tj:tstg
45
V
5
V
200
mA
100
mA
330
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off
I_CBO
Current
100 nA
10 µA
I_E=0, V_CB=20V
I_E=0,
V_CB=20V,T_j=100°C
Base-Emitter Voltage
V_BE
550
700 mV I_C=2.0mA, V_CE=5V
Collector-Emitter Saturation V_CE(sat)
Voltage
120 250 mV I_C=10mA, I_B=0.5mA
210
mV I_C=50mA, I_B=2.5mA
Base-Emitter Saturation
V_BE(sat)
750
mV I_C=10mA, I_B=0.5mA
Voltage
850
mV I_C=50mA, I_B=2.5mA
Static Forward BCW71 h_FE
Current Transfer
Ratio
BCW72
90
110
220
150
200
450
I_C =10µA, V_CE =5V
I_C =2mA, V_CE =5V
I_C =10µA, V_CE =5V
I_C =2mA, V_CE =5V
Transition Frequency
f_T
300
MHz I_C =10mA, V_CE =5V
f =35MHz
Collector Capacitance
C_TC
4
pF
I_E =I_e =0, V_CB =10V
f =1MHz
Noise Figure
N
10
dB
I_C =200µA, V_CE =5V
R_S =2KΩ, f =1KHz
B =200Hz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for these devices
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