BCW60 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistors

SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 – AUGUST 1995
PARTMARKING DETAILS
BCW60A – AA
BCW60B – AB
BCW60C – AC
BCW60D – AD
BCW60AR – CR
BCW60BR – DR
BCW60CR – AR
BCW60DR – BR
COMPLEMENTARY TYPE
BCW61
BCW60
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_TOT
tj:tstg
SOT23
VALUE
32
32
5
200
50
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
FOUR TERMINAL NETWORK DATA (I_c=2mA, V_CE=5V, f=1kHz)
h_FE Group A
h_FE Group B
h_FE Group C
h_FE Group D
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h_11e 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 kΩ
h_12e
1.5
2
2
3
10^-4
h_21e
200
260
330
520
h_22e
18 30
24 50
30 60
50 100 µS
SWITCHING CIRCUIT
-VBB
VCC(+10V)
R2
1µsec
R1
+10V
tr < 5nsec
50Ω
Mark/Space ratio < 0.01
Zs=50Ω
RL
tr < 5nsec
Zin ≥ 100kΩ
Oscilloscope
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