BCW31 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN general purpose transistors

SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 - JUNE 1995
PARTMARKING DETAILS
– BCW31 – D1
BCW32 – D2
BCW33 – D3
BCW31R – D4
BCW32R – D5
BCW33R – D6
COMPLEMENTARY TYPES
– BCW31 - BCW29
– BCW32 - BCW30
– BCW33 - N/A
BCW31
BCW32
BCW33
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
T_j:T_stg
VALUE
32
32
5
200
100
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Base - Emitter Voltage
V_BE
550
700 mV I_C=2mA, V_CE = 5V
Collector-Emitter
Saturation Voltage
V_CE(SAT)
120 250 mV I_C=10mA, I_B = 0.5mA
210
mV I_C=50mA, I_B =2.5mA
Base-Emitter
Saturation Voltage
V_BE(SAT)
750
850
mV I_C=10mA, I_B=0.5mA
mV I_C =50mA, I_B=2.5mA
Collector- Base Cut-Off Current I_CBO
100 nA
10
µA
I_E=0, V_CB=20V
I_E=0,V_CB=20V,T_j=100°C
Static Forward
Current Transfer
Ratio
BCW31 h_FE
BCW32 h_FE
90
110
220
150
200
450
I_C=10µA, V_CE=5V
I_C=2mA, V_CE=5V
I_C=10µA, V_CE=5V
I_C=2mA, V_CE=5V
BCW33 h_FE
270
420
800
I_C=10µA, V_CE=5V
I_C=2mA, V_CE=5V
Transition Frequency
f_T
300
MHz I_C=10mA, V_CE=5V
f = 35MHz
Collector Capacitance
C_TC
4
pF
I_E =I_e =0, V_CB =10V
f= 1MHz
Noise Figure
N
10
dB
I_C= 200mA, V_CE =5V
R_S =2KΩ, f=1KHz
B= 200Hz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
PAGE NO