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| BCV47 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – NPN SILICON DARLINGTON TRANSISTOR | |||
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BCV27 IS OBSOLETE PLEASE USE MMBT6427
BCV47 IS CURRENTLY ACTIVE
SOT23 NPN SILICON PLANAR
BCV27
DARLINGTON TRANSISTORS
BCV47
ISSUE 3 Â SEPTEMBER 1995
FEATURES
* High VCEO
* Low saturation voltage
COMPLEMENTARY TYPES Â
7
BCV27 Â BCV28
BCV47 Â BCV48
PARTMARKING DETAILS Â BCV27 Â ZFF
BCV47 Â ZFG
ABSOLUTE MAXIMUM RATINGS.
E
C
B
SOT23
PARAMETER
SYMBOL
BCV27
BCV47
UNIT
Collector-Base Voltage
VCBO
40
80
V
Collector-Emitter Voltage
VCEO
30
60
V
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
800
mA
Continuous Collector Current
IC
500
mA
Base Current
IB
100
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
BCV27
BCV47 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO 40
80
V
IC=100µA
Collector-Emitter
V(BR)CEO 30
60
V
IC=10mA*
Breakdown Voltage
Emitter-Base
V(BR)EBO 10
10
V
IE=10µA
Breakdown Voltage
Collector Cut-Off
ICBO
Current
Emitter Base
IEBO
Cut-Off Current
100
nA
VCB = 30V
10
100 nA
µA
10
µA
VCB = 60V
VCB=30V,Tamb
VCB=60V,Tamb
=150oC
=150oC
100
100 nA
VEB=4V
Collector-Emitter
VCE(sat)
1.0
1.0 V
IC=100mA,IB=0.1mA*
Saturation Voltage
Base-Emitter
VBE(sat)
1.5
1.5 V
IC=100mA,IB=0.1mA*
Saturation Voltage
Static Forward Current hFE
Transfer Ratio
Transition Frequency fT
4K
10K
20K
4K
170 Typical
2K
4K
10K
2K
170 Typical
MHz
IC=100µA, VCE=1VÂ
IC=10mA, VCE=5V*
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
IC=50mA, VCE=5V
f = 20MHz
Output Capacitance Cobo
3.5 Typical
3.5 Typical
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
 Periodic Sample Test Only.
For typical graphs see FMMT38A datasheet
3 - 22
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