 English |
|
|
|
|
|
|
|
| BCV29 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN Darlington transistors | |||
| |||
|
SOT89 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 4 â JANUARY 1996
COMPLEMENTARY TYPE â BCV28
PARTMARKING DETAIL â EF
BCV29
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT89
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
40
V
30
V
10
V
800
mA
500
mA
1
W
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 40
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 30
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 10
V
IE=10µA
Collector Cut-Off
Current
ICBO
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
100 nA
10
µA
100 nA
1
V
VCB=30V
VCB=30V, Tamb=150°C
VEB=4V
IC=100mA, IB-0.1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.5
V
IC=100mA, IB=0.1mA*
Static Forward Current hFE
Transfer Ratio
Transition Frequency fT
4000
10000
20000
4000
150
MHz
IC=100µA, VCE=1Vâ
IC=10mA, VCE=5V*
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
IC=50mA, VCE=5V
f = 20MHz
Output Capacitance
Cobo
3.5
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
For typical graphs see FMMT38A datasheet â Periodic Sample Test Only.
Spice parameter data is available upon request for this device
3 - 24
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese