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| BCV28 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP Darlington transistors | |||
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SOT89 PNP SILICON
DARLINGTON TRANSISTOR
ISSUE 3 â SEPTEMBER 1995
7
COMPLEMENTARY TYPE â BCV29
PARTMARKING DETAIL â ED
BCV28
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT89
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
-40
V
-30
V
-10
V
-800
mA
-500
mA
1
W
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -40
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -30
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -10
V
IE=10µA
Collector Cut-Off
Current
ICBO
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-100 nA
-10
µA
-100 nA
-1
V
VCB=-30V
VCB=-30V, Tamb=150°C
VEB=-4V
IC=-100mA, IB=-0.1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.5 V
IC=-100mA, IB=-0.1mA*
Static Forward Current hFE
Transfer Ratio
Transition Frequency fT
4000
10000
20000
4000
200
MHz
IC=-100µA, VCE=-1Vâ
IC=-10mA, VCE=-5V*
IC=-100mA, VCE=-5V*
IC=-0.5mA, VCE=-5V*
IC=-50mA, VCE=-5V
f = 20MHz
Output Capacitance
Cobo
4.5
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
â Periodic Sample Test Only.
VCB=-10V, f=1MHz
3 - 23
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