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| BCV26 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP Darlington transistors | |||
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SOT23 PNP SILICON PLANAR
DARLINGTON TRANSISTORS
BCV26
BCV46
ISSUE 3 Â SEPTEMBER 1995
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE Â BCV26 - BCV27
BCV46 - BCV47
PARTMARKING DETAILS Â BCV26 - ZFD
BCV46 - ZFE
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
BCV26
BCV46
UNIT
Collector-Base Voltage
VCBO
-40
-80
V
Collector-Emitter Voltage
VCEO
-30
-60
V
Emitter-Base Voltage
VEBO
-10
V
Peak Pulse Current
ICM
-800
mA
Continuous Collector Current
IC
-500
mA
Base Current
IB
-100
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
BCV26
BCV46
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO -40
-80
Breakdown Voltage
V IC=100µA
Collector-Emitter
V(BR)CEO -30
-60
Breakdown Voltage
V IC=10mA *
Emitter-Base
V(BR)EBO -10
-10
Breakdown Voltage
V IE=10µA
Collector Cut-Off
Current
ICBO
-100
-10
-100
-10
nA
nA
µA
µA
VVCCBB
=
=
-30V
-60V
VCB=-30V,Tamb
VCB=-60V,Tamb
=150oC
=150oC
Emitter Base
IEBO
Cut-Off Current
-100
-100
nA VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-1.0
-1.0
V IC=-100mA,IB=-0.1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.5
-1.5
V IC=-100mA,IB=-0.1mA*
Static Forward Current hFE
Transfer Ratio
Transition Frequency fT
Output Capacitance Cobo
4K
10K
20K
4K
200 Typical
2K
4K
10K
2K
200 Typical
4.5 Typical 4.5 Typical
MHz
pF
IC=-100µÎ, VCE=-1VÂ
IC=-10mA, VCE=-5V*
IC=-100mA, VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-50mA, VCE=-5V
f = 20MHz
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for these devices  Periodic Sample Test Only.
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