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| BCP69 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP medium power transistor | |||
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SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 Â FEBRUARY 1996 7
FEATURES
* For AF drivers and output stages
* High collector current and Low VCE(sat)
COMPLEMENTARY TYPE Â BCP68
PARTMARKING DETAIL Â
BCP69
BCP69 Â 25
BCP69
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
-25
V
-20
V
-5
V
-2
A
-1
A
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -25
V
IC=-10µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -20
V
IC=- 30mA
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-10µA
Collector Cut-Off
ICBO
Current
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-100 nA
-10 µA
-10
µA
-0.5 V
VCB=-25V
VCB=-25V, Tamb=150°C
VEB=-5V
IC=-1A, IB=-100mA*
Base-Emitter Turn-On VBE(on)
Voltage
Static Forward Current hFE
50
Transfer Ratio
BCP69 63
BCP69-25 160
Transition Frequency fT
- 0.6
-1.0
400
250 400
100
V
V
MHz
IC=-5A, VCE=-10V*
IC=-1A, VCE=-1V*
IC=-5mA, VCE=-10V*
IC=-500mA, VCE=-1V*
IC=-500mA, VCE=-1V*
IC=-100mA, VCE=-5V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
For typical characteristics graphs see FMMT549 datasheet.
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