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| BCP68 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN medium power transistor | |||
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SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 Â FEBRUARY 1996 7
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low VCE(sat)
COMPLEMENTARY TYPE Â BCP69
PARTMARKING DETAIL Â
BCP68
BCP68 Â 25
BCP68
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
25
V
20
V
5
V
2
A
1
A
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 25
V
IC=10µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 20
V
IC= 30mA *
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V
IE=10µA
Collector Cut-Off
ICBO
Current
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
100 nA
10
µA
10
µA
0.5 V
VCB=25V
VCB=25V, Tamb=150°C
VEB=5V
IC=1A, IB=100mA*
Base-Emitter Turn-On VBE(on)
Voltage
0.6
V
1.0 V
IC=5A, VCE=10V*
IC=1A, VCE=1V*
Static Forward Current hFE
50
Transfer Ratio
BCP68 63
400
BCP68-25 160 250 400
IC=5mA, VCE=10V*
IC=500mA, VCE=1V*
IC=500mA, VCE=1V*
Transition Frequency fT
100
MHz IC=100mA, VCE=5V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
For typical characteristics graphs see FMMT449 datasheet.
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