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| BCP56 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 Â AUGUST 1995
7
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low VCE(sat)
BCP56
C
COMPLEMENTARY TYPE Â BCP53
PARTMARKING DETAILS Â BCP56
BCP56 Â 10
BCP56 Â 16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E
C
B
VALUE
100
80
5
1.5
1
2
-55 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 100
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 80
V
IC= 10mA *
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V
IE=10µA
Collector Cut-Off
ICBO
Current
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
100 nA
20
µA
10
µA
0.5 V
VCB=30V
VCB=30V, Tamb=150°C
VEB=5V
IC=500mA, IB=50mA*
Base-Emitter Turn-On VBE(on)
Voltage
1.0 V
IC=500mA, VCE=2V*
Static Forward Current hFE
40
250
Transfer Ratio
25
BCP56-10 63
100 160
BCP56-16 100 160 250
IC=150mA, VCE=2V*
IC=500mA, VCE=2V*
IC=150mA, VCE=2V*
IC=150mA, VCE=2V*
Transition Frequency fT
125
MHz IC=50mA, VCE=10V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
3 - 18
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