BC817_06 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

PART OBSOLETE - USE BCW66H
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 – june 1996
7
PARTMARKING DETAILS
BC817 – 6DZ
BC818 – 6HZ
BC817-16 – 6AZ
BC818-16 – 6EZ
BC817-25 – 6BZ
BC818-25 – 6FZ
BC817-40 – 6CZ
BC818-40 – 6GZ
COMPLEMENTARY TYPES
BC817
– BC807
BC818
– BC808
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
I_BM
P_tot
T_j:T_stg
BC817
BC818
E
C
B
SOT23
BC817
BC818
50
30
45
25
5
1
500
100
200
330
-55 to +150
UNIT
V
V
V
A
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
I_CBO
I_EBO
V_CE(sat)
0.1 µA V_CB=20V, I_E=0
5
µA V_CB=20V, I_E=0, T_amb=150°C
10 µA V_EB=5V, I_C=0
700 mV I_C=500mA, I_B=50mA*
Base-Emitter
Turn-on Voltage
V_BE(on)
1.2 V
I_C=500mA, V_CE=1V*
Static Forward Current h_FE
Transfer Ratio
-16
-25
-40
Transition
f_T
Frequency
100
600
I_C=100mA, V_CE=1V*
40
I_C=500mA, V_CE=1V*
100
250
I_C=100mA, V_CE=1V*
160
400
I_C=100mA, V_CE=1V*
250
600
I_C=100mA, V_CE=1V*
200
MHz I_C=10mA, V_CE=5V
f=35MHz
Collector-base
Capacitance
C_obo
5.0
pF I_E=I_e=0, V_CB=10V
f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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