BC817 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN general purpose transistor

SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 – MARCH 2001
✪
PARTMARKING DETAILS
BC81716 – 6AZ
BC81725 – 6BZ
BC81740 – 6CZ
COMPLEMENTARY TYPE
– BC807
BC817
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
I_BM
P_tot
T_j:T_stg
SOT23
VALUE
50
45
5
1
500
100
200
330
-55 to +150
UNIT
V
V
V
A
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
I_CBO
Emitter Cut-Off Current I_EBO
Collector-Emitter
Saturation Voltage
V_CE(sat)
0.1 µA V_CB=20V, I_E=0
5
µA V_CB=20V, I_E=0, T_amb=150°C
10
µA
V_EB=5V, I_C=0
700 mV I_C=500mA, I_B=50mA*
Base-Emitter
Saturation Voltage
V_BE(on)
1.2 V
I_C=500mA, V_CE=1V*
Static Forward Current h_FE
Transfer Ratio
BC81716
BC81725
BC81740
All bands
Transition Frequency f_T
100
250
I_C=100mA, V_CE=1V*
160
400
I_C=100mA, V_CE=1V*
250
600
I_C=100mA, V_CE=1V*
40
I_C=500mA, V_CE=1V*
200
MHz I_C=10mA, V_CE=5V
f=35MHz
Output Capacitance
C_obo
5.0
*Measured under pulsed conditions.
pF V_CB=10V, f=1MHz
TBA