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| BC807 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP general purpose transistor | |||
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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 â MARCH 2001
PARTMARKING DETAILS
BC80716 â 5AZ
BC80725 â 5BZ
BC80740 â 5CZ
COMPLEMENTARY TYPE
BC817
BC807
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
IBM
Ptot
Tj:Tstg
SOT23
VALUE
-50
-45
-5
-1
-500
-100
-200
330
-55 to +150
UNIT
V
V
V
A
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
ICBO
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.1 µA
-0.5
-10 µA
-700 mV
VCB=-20V, IE=0
VCB=-20V, IE=0, Tamb=150°C
VEB=-5V, IC=0
IC=-500mA, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(on)
-1.2 V
IC=-500mA, VCE=-1V*
Static Forward Current hFE
Transfer Ratio
BC80716
BC80725
BC80740
All bands
Transition Frequency fT
100
250
IC=-100mA, VCE=-1V*
160
400
IC=-100mA, VCE=-1V*
250
600
IC=-100mA, VCE=-1V*
40
IC=-500mA, VCE=-1V*
100
MHz IC=-10mA, VCE=-5V
f=35MHz
Output Capacitance
Cobo
8.0
pF VCB=-10V f=1MHz
*Measured under pulsed conditions.
Spice parameter data is available upon request for these devices
tba
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