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| BC639 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 Â SEPT 93
FEATURES
* 1 Amp continuous current
* Ptot= 800 mW
BC639
E
C
B
TO92
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
VALUE
80
80
5
1
800
-55 to +150
UNIT
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 80
V
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 80
V
IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=10µA, IC=0
Collector Cut-Off Current ICBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.1
µA
VCB=30V
0.5
V
IC=500mA, IB=50mA*
Base-Emitter
Turn-on Voltage
VBE(on)
1.0
V
IC=500mA,VCE=2V*
Static Forward Current hFE
25
Transfer Ratio
40
160
25
Transition
fT
Frequency
200
MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
IC=5mA, VCE=2V*
IC=150mA, VCE=2V*
IC=500mA, VCE=2V*
IC=50mA, VCE=2V
f=100MHz
3-18
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