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| BC372P Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR | |||
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PART OBSOLETE - USE ZTX603
NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 2 Â SEPT 93
FEATURES
* 100 Volt VCEO
* Gain of 8k at IC=250mA
* Ptot=1 Watt
BC372P
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
100
100
12
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 100
V
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CES 100
V
IC=100µA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 12
V
IE=10µA, IC=0
Collector Cut-Off
ICBO
Current
100 nA
VCB=80V, IE=0
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
100 nA
1.1 V
VEB=10V, IC=0
IC=250mA, IB=0.25mA
Base-Emitter
Saturation Voltage
VBE(sat)
2
V
IC=250mA, IB=0.25mA
Static Forward Current hFE
10K
Transfer Ratio
8K
Transition
Frequency
fT
100
MHz
IC=100mA, VCE=5V*
IC=250mA, VCE=5V*
IC=100mA, VCE=5V
f=100MHz
Output Capacitance Cobo
25
pF
VCB=10V, f=1MHz
3-17
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