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| BC369 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP medium power transistor | |||
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PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 Â SEPT 93
FEATURES
* 20 Volt VCEO
* 1 Amp continuous current
* Ptot= 800 mW
BC369
E
CB
TO92
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
VALUE
-25
-20
-5
-1
800
-55 to +150
UNIT
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -25
V
IC=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -20
V
IC=-10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-100µA, IC=0
Collector Cut-Off Current ICBO
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-10
µA
-10
µA
-0.5 V
VCB=-25V
VEB=-5V, IC=0
IC=-1A, IB=-100mA*
Base-Emitter
Turn-on Voltage
VBE(on)
-1.0 V
IC=-1A,VCE=-1V*
Static Forward Current hFE
50
Transfer Ratio
85
375
60
Transition
Frequency
fT
65
MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3-15
IC=-5mA, VCE=-10V*
IC=-500mA, VCE=-1V*
IC=-1A, VCE=-1V*
IC=-10mA, VCE=-5V
f=100MHz
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