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| BC368 Datasheet, PDF (1/1 Pages) Motorola, Inc – Amplifier Transistors | |||
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 Â SEPT 93
FEATURES
* 20 Volt VCEO
* 1 Amp continuous current
* Ptot= 800 mW
BC368
E
C
B
TO92
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
VALUE
25
20
5
1
800
-55 to +150
UNIT
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 25
V
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 20
V
IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=100µA, IC=0
Collector Cut-Off Current ICBO
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
10
µA
VCB=25V
10
µA
VEB=5V, IC=0
0.5
V
IC=1A, IB=100mA*
Base-Emitter
Turn-on Voltage
VBE(on)
1
V
IC=1A,VCE=1V*
Static Forward Current hFE
50
Transfer Ratio
85
375
60
Transition
Frequency
fT
65
MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3-14
IC=5mA, VCE=10V*
IC=500mA, VCE=1V*
IC=1A, VCE=1V*
IC=10mA, VCE=5V
f=100MHz
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