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| BBY40 Datasheet, PDF (1/2 Pages) NXP Semiconductors – VHF variable capacitance diode | |||
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SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
ISSUE 4 â JANUARY 1998
PIN CONFIGURATION
1
PARTMARKING DETAIL
BBY40 â S2
BBY40
2
1
3
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
Ptot
Tj:Tstg
VALUE
330
-55 to +150
UNIT
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
VBR
Voltage
28.0
V
IR = 10µA
Reverse current
IR
10
nA
VR = 28V
1.0
µA
VR = 28V, Tamb = 60°C
TUNING CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Diode Capacitance
Capacitance Ratio
Series Resistance
Cd
Cd / Cd
rd
26.0
4.3
5.0
0.4
32.0 pF
6.0
pF
6.5
0.6
â¦
VR = 3V, f=1MHz
VR = 25V, f=1MHz
VR = 3V/25V, f=1MHz
f=200MHz at the value
of VR at which
Cd=25pF
Spice parameter data is available upon request for this device
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