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| BBY31 Datasheet, PDF (1/1 Pages) NXP Semiconductors – UHF variable capacitance diode | |||
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SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
ISSUE 4 â JANUARY 1998
PIN CONFIGURATION
1
PARTMARKING DETAIL
BBY31 â S1
BBY31
2
1
3
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
Ptot
Tj:Tstg
VALUE
330
-55 to +150
UNIT
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
VBR
Voltage
28.0
V
IR = 10µA
Reverse current
IR
10
nA
VR = 28V
1.0
µA
VR = 28V, Tamb = 85°C
TUNING CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Diode Capacitance
Capacitance Ratio
Series Resistance
Cd
17.5
pF
11.5
pF
1.8
2.8
pF
Cd / Cd
rd
5.0
1.2
â¦
VR = 1V, f=1MHz
VR = 3V, f=1MHz
VR = 25V, f=1MHz
VR = 3V/25V, f=1MHz
f=470MHz at the value
of VR at which Cd=9pF
Spice parameter data is available upon request for this device
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