BAV99 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

SOT23 SILICON PLANAR HIGH SPEED
SWITCHING SERIES DIODE PAIR
ISSUE 2 - MAY 1995
PIN CON₁FIGURATIONS
PARTMARKING DETAILS
BAV99...........A7
BAV99
2
1
3
3
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
( over any 20mS Period)
Repetitive Peak Forward Current
Peak Forward Surge Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_R
V_RRM
I_F(AV)
I_FRM
I_FM(SURGE)
P_tot
T_j:T_stg
SOT23
VALUE
70
70
100
200
500
330
-55 to +150
UNIT
V
V
mA
mA
mA (dc)
mW
°C
CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Forward Voltage
V_F
Reverse Current
I_R
715 mV I_F=1mA
855 mV I_F=10mA
1.1 V
I_F=50mA
1.3 V
I_F=100mA
30
µA
V_R=25V, T_amb=150°C
2.5 µA V_R=70V
50
µA
V_R=70V, T_amb=150°C
Diode Capacitance C_D
Forward Recovery V_fr
Voltage
Reverse Recovery t_rr
Time
1.5 pF
1.75 V
6
ns
f=1MHz
Switched to
I_F=10mA, t_r=20ns
Switched from
IF=10mA, V_R=1V
R_L=100Ω,I_R=1mA
Spice parameter data is available upon request for this device
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