BAT54 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SURFACT MOUNT SCHOTTKY BARRIER

SOT23 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1– SEPTEMBER 1995 7
1
1
1
1
BAT54 SERIES
2
1
3
3
BAT54
SINGLE
L4Z
2
3
BAT54A
COMMON
ANODE
L42
3
2
BAT54S
SERIES
L44
2
3
BAT54C
COMMON
CATHODE
L43
FEATURES: Low V_F & High Current Capability
APPLICATIONS: PSU, Mobile Telecomms & SCSI
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Continuous Reverse Voltage
Forward Current
Forward Voltage @ I_F =10mA
Repetitive Peak Forward Current
Non Repetitive Forward Current t<1s
Power Dissipation at T_amb=25°C
Storage Temperature Range
JunctionTemperature
¤
V_R
I_F
V_F
I_FRM
I_FSM
P_tot
T_stg
T_j
Device Type
Pin Configuration
Partmarking Detail
VALUE
30
200
400
300
600
330
-55 to +150
125
UNIT
V
mA
mV
mA
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown V_(BR)R
Voltage
30 50
V
I_R=10µA
Forward Voltage
V_F
Reverse Current
I_R
Diode Capacitance C_D
Reverse Recover
t_rr
Time
135 240 mV I_F=0.1mA
200 320 mV I_F=1mA
280 400 mV I_F=10mA
350 500 mV I_F=30mA
530 1000 mV I_F=100mA
2.5 4
µA V_R=25V
7.5 10
pF
f=1MHz,V_R=1V
5
ns switched from
I_F=10mA to I_R=10mA
R_L=100Ω, Measured
at I_R=1mA
¤ Dual Device; For simultaneous continuous use Tj=100°C.
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