BAS70 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier double diodes

SOT23 SILICON PLANAR DUAL
SCHOTTKY BARRIER DIODES
ISSUE 3 - JULY 1995
7
1
1
1
BAS70-04
BAS70-05
BAS70-06
.
2
1
3
3
2
2
3
2
3
SERIES PAIR
COMMON CATHODE COMMON ANODE
Device Type: BAS70-04 Device Type: BAS70-05 Device Type: BAS70-06
Partmarking Detail: 2Z Partmarking Detail: 2Z5 Partmarking Detail: 1Z
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
P_tot
T_j:T_stg
VALUE
330
-55 to +150
UNIT
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltage
V_BR
70
V
Reverse Leakage Current I_R
200 nA
Forward Voltage
V_F
410 mV
Forward Current
I_F
15
mA
Capacitance
C_T
2.0 pF
Effective Minority Lifetime τ
(1)
100 ps
(1) Sample Test
For typical characteristics graphs see ZC2800E datasheet.
I_R=10µA
V_R=50V
I_F=1mA
V_F=1V
f=1MHz, V_R=0
f=54MHz, I_pk= 20mA
(Krakauer Test Method)
3-3