BAS19 Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose diodes

SOT23 SILICON HIGH
SPEED SWITCHING DIODE
ISSUE 2 – JANUARY 1995
PIN CONFIGURATION

BAS19
BAS20
BAS21
2
1
PARTMARKING DETAILS
BAS19 – A8
BAS20 – A81
!
BAS21 – A82
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Repetative Peak Reverse Voltage
Average Forward Rectified Current
Forward Current
Repetative Peak Forward Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature
Range
SYMBOL
V_R
V_RRM
I_F(AV)
I_F
I_FRM
P_tot
T_j:T_stg
BAS19
100
120
BAS20
150
200
200
200
625
330
-55 to +150
BAS21
200
250
UNIT
V
V
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse
Breakdown
Voltage
BAS19
BAS20
BAS21
Reverse Current
V_(BR)
I_R
Static Forward Voltage V_F
Differential Resistance r_diff
Diode Capacitance
C_d
Reverse Recovery Time t_rr
120
200
250
5
V
V
V
100 nA
100 µA
1.00
1.25
Ω
5
pF
50 ns
I_R=100µA (1)
I_R=100µA (1)
I_R=100µA (2)
V_R=V_Rmax
V_R=V_Rmax, T_J=150°C
IF=100mA
I_F=200mA
I_F=10mA
f=1MHz
I_F=30mA to I_R=30mA
R_L=10Ω measured at I_R=3mA
(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
(2) At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage
limited to 275V
Spice parameter data is available upon request for this device
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