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| BAS16 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Small Signal Diode | |||
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SOT23 PNP SILICON HIGH
SPEED SWITCHING DIODE
ISSUE 3 Â FEBRUARY 1996
PIN CONFIGURATION
BAS16
E
C
PARTMARKING DETAILS
B
BAS16 Â A6
!
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Repetative Reverse Voltage
Repetative Peak Forward Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VR
VRRM
IFRM
Ptot
Tj:Tstg
VALUE
75
85
250
330
-55 to +150
UNIT
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Forward Voltage
VF
Reverse Current
IR
Forward Recovery
VFR
Voltage
Diode Capacitance
Cd
Reverse Recovery Time trr
715
855
1000
1250
30 nA
1
mA
50
1.75
2
pF
6
ns
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=25V, Tj=150°C
VR=75V
VR=75V, Tj=150°C
Switched to
IF=10mA, tr=20ns
f=1MHz, VR=0
IF=10mA, IRM=10mA
RL=100â¦, Irr=1mA
(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
(2) At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage
limited to 275V
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