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| 2N7002 Datasheet, PDF (1/1 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 â JANUARY 1996
FEATURES
* 60 Volt VCEO
PARTMARKING DETAIL â 702
2N7002
S
D
G
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
60
V
Continuous Drain Current at Tamb=25°C
ID
115
mA
Pulsed Drain Current
IDM
800
mA
Gate-Source Voltage
VGS
± 40
V
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS
60
V
ID=10µA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
1
2.5 V
ID=250mA, VDS= VGS
Gate-Body Leakage
IGSS
10
nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
IDSS
Current
1
µA VDS=48V, VGS=0V
500 µA VDS=48V, VGS=0V, T=125°C(2)
On-State Drain Current(1)
ID(on)
500
mA VDS=25V, VGS=10V
Static Drain-Source On-State VDS(on)
Voltage (1)
3.75 V
VGS=10V, ID=500mA
375 mV VGS=5V, ID=50mA
Static Drain-Source On-State RDS(on)
Resistance (1)
7.5 â¦
7.5 â¦
VGS=10V, ID=500mA
VGS=5V, ID=50mA
Forward Transconductance gfs
80
(1)(2)
mS VDS=25V, ID=500mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
50
pF
25
pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
5
pF
Turn-On Time (2)(3)
Turn-Off Time (2)(3)
t(on)
t(off)
20
ns VDD â30V, ID=200mA
20
ns Rg=25â¦, RL=150â¦
(1) Measured under pulsed conditions. Width=300µs. Duty cycle â¤2% (2) Sample test.
(3) Switching times measured with 50⦠source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3-2
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